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Bulletin I27201 rev. A 01/06
GA100TS60SF
"HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT
Features
*
* * * *
Standard Speed PT Igbt Technology Fred PT Antiparallel diodes with Fast recovery Very Low Conduction Losses Al2O3 DBC UL Pending
VCES = 600V IC = 220A DC VCE(on) typ. = 1.39V @ IC = 200A TJ = 25C
Benefits
*
* * * *
Optimized for high current inverter stages (AC TIG welding machines) Direct mounting to heatsink Hard switching operation frequency up to 1 KHz Very low junction-to-case thermal resistance Low EMI INT-A-PAK
Absolute Maximum Ratings Parameters
V CES IC I CM I LM V GE V ISOL PD Collector-to-Emitter Voltage Continuos Collector Current Pulsed Collector Current Peak Switching Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation @ TC = 25C @ TC = 100C @ TC = 25C @ TC = 130C
Max
600 220 100 440 440 20 2500 780 312
Units
V A
V W
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GA100TS60SF
Bulletin I27201 rev. A 01/06
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameters
VBRCES V CE(on) Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage
Min Typ Max Units Test Conditions
600 1.11 1.39 1.08 1.28 1.22 6 1 10 1.44 1.25 1.96 1.54 250 nA V mA V V GE = 0V, I C = 1mA V GE = 15V, I C = 100A IC = 200A V GE = 15V, I C = 100A, T J = 125C I C = 0.25mA V GE = 0V, V CE = 600V V GE = 0V, V CE = 600V, T J = 125C I C = 100A, V GE = 0V I C = 100A, V GE = 0V, T J = 125C V GE = 20V
V GE(th) I CES VFM I GES
Gate Threshold Voltage Collector-to-Emiter Leakage Current Diode Forward Voltage drop Gate-to-Emitter Leakage Current
3
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameters
Qg Qge Qgc tr tf Eon Eoff Ets Eon Eoff Ets Cies Coes Cres trr Irr Qrr trr Irr Qrr Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Rise Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Current Diode Recovery Charge Diode Reverse Recovery Time Diode Peak Reverse Current Diode Recovery Charge
Min Typ
640 108 230 0.45 1.0 4 23 27 6 35 41 16250 1040 190 91 10.6 500 180 17 1633
Max Units Test Conditions
700 120 300 s 6 29 35 12 40 52 mJ nC IC = 100A V CC = 400V VGE = 15V
IC = 100A, VCC = 480V, VGE = 15V Rg = 15
mJ
IC = 100A, VCC = 480V, VGE = 15V Rg = 15, TJ = 125C
pF
155 15 900 344 20.5 2315
ns A nC ns A nC
VGE = 0V VCC = 30V f = 1.0 MHz IF = 50A, dIF /dt = 200A/s VRR = 200V IF = 50A, dIF /dt = 200A/s VRR = 200V TJ = 125C
Thermal- Mechanical Specifications
Parameters
TJ TSTG R thJC R thCS T Operating Junction Temperature Range Storage Temperature Range Junction-to-Case Case-to-Sink Mounting torque Weight per Switch Per Diode Per Module Case to heatsink Case to terminal 1, 2, 3 185 0.1 4 3 Nm g
Min
- 40 - 40
Typ
Max
150 125 0.16 0.48
Units
C C/ W
2
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GA100TS60SF
Bulletin I27201 rev. A 01/06
1000
Vge = 15V
IC, Collector-to-Emitter Current (A)
1000
IC , Collector-to-Emitter Current (A)
T J = 125C
100
T J = 25C
100
10
Vce = 10V 380s PULSE WIDTH
Tj = 25C Tj = 125C
10 0.6
0.8
1
1.2
1.4
1.6
1.8
1 5.5
6.5
7.5
8.5
VCE, Collector-to-Emitter Voltage (V) Fig. 1 - Typical Output Characteristics
VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Transfer Characteristics
240 200 160 120 80 40 0 25
VCE, Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A)
1.5
I C = 200A
1.3
1.1
I C = 100A I = 50A
0.9
50
75
100
125
150
0.7 25
50
75
100
125
150
TC, Case Temperature (C) Fig. 3 - Maximum Collector Current vs. Case Temperature
TJ, Junction Temperature (C) Fig. 4 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
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3
GA100TS60SF
Bulletin I27201 rev. A 01/06
20
VGE, Gate-to-Emitter Voltage (V)
Vcc = 400V Ic = 100A
Switching Losses (mJ)
35
Tj = 25C, Vce = 480V 30 Vge = 15V, Ic = 100A
15
25 20 15 10 5
Eoff
10
Eon
5
0 0 100 200 300 400 500 600 700
QG, Total Gate Charge (nC) Fig. 5 - Typical Gate Charge vs. Gate-toEmitter Voltage
0 10
20
30
40
50
RG, Gate Reistance () Fig. 6 - Typical Switching Losses vs Gate Resistance
60 50
Switching Losses (mJ)
Tj = 125C Vce = 480V Vge = 15V Rge = 15
Eoff
40 30 20 10 0 0 40 80 120 160
IC, Collector-to-Emitter Current (A)
Eon
Fig. 7 - Typical Switching Losses vs Collector-to-Emitter Current
4
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GA100TS60SF
Bulletin I27201 rev. A 01/06
1000
1000
Vr = 200V
Instantaneous Forward Current - I F (A)
100
Tj = 125C
t rr (ns)
If = 50A, Tj = 125C
100
If = 50A, Tj = 25C
10
Tj = 25C
1 0 0.5 1 1.5 2 2.5
Forward Voltage Drop- VFM (V) Fig. 8 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
10 100
di f /dt - A/s
1000
Fig. 9 - Typical Reverse Recovery vs. dif /dt
100
10000
Vr = 200V
Vr = 200V
If = 50A, Tj = 125C
If = 50A, Tj = 125C
10
Q RR (nC)
I RRM (A)
1000
If = 50A, Tj = 25C
If = 50A, Tj = 25C
1 100
1000
100 100
1000
di f /dt - A/s Fig. 10 - Typical Reverse Recovery Current vs. dif /dt
dif /dt - A/s Fig. 11 - Typical Stored Charge vs. dif /dt
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GA100TS60SF
Bulletin I27201 rev. A 01/06
Outline Table
All dimensions are in millimeters
Ordering Information Table
Device Code
GA 100
1 2
T
3
S
4
60
5
S
6
F
7
1 2 3 4 5 6 7
-
Essential Part Number IGBT modules Current rating Int-A-Pak Voltage Code Speed/ Type Diode Type (60 = 600V) (S = Standard Speed IGBT) (100 = 100A) Circuit Configuration (T = Half Bridge)
6
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GA100TS60SF
Bulletin I27201 rev. A 01/06
Data and specifications subject to change without notice. This product has been designed for Industrial Level. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 01/06
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